The impact of ScO x N y interlayers on unintentional doping and threading dislocations in GaN (2010)
Attributed to:
Nitrides for the 21st century
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/1742-6596/209/1/012067
Publication URI: http://dx.doi.org/10.1088/1742-6596/209/1/012067
Type: Journal Article/Review
Parent Publication: Journal of Physics: Conference Series