Temperature dependence of gain and excess noise in InAs electron avalanche photodiodes. (2012)
Attributed to:
Ultra high detectivity single carrier multiplication InAs avalanche photodiodes for IR optical detection
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1364/oe.20.029568
PubMed Identifier: 23388783
Publication URI: http://europepmc.org/abstract/MED/23388783
Type: Journal Article/Review
Volume: 20
Parent Publication: Optics express
Issue: 28
ISSN: 1094-4087