Broadening of metal-oxide-semiconductor admittance characteristics: Measurement, sources, and its effects on interface state density analyses (2011)
Attributed to:
III-V MOSFETs for Ultimate CMOS
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.3665720
Publication URI: http://dx.doi.org/10.1063/1.3665720
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 11