Surface passivation of AlN/GaN MOS-HEMTs using ultra-thin Al2O3 formed by thermal oxidation of evaporated aluminium (2010)
Attributed to:
III-V MOSFETs for Ultimate CMOS
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1049/el.2010.2781
Publication URI: http://dx.doi.org/10.1049/el.2010.2781
Type: Journal Article/Review
Parent Publication: Electronics Letters
Issue: 4