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Surface passivation of AlN/GaN MOS-HEMTs using ultra-thin Al 2 O 3 formed by thermal oxidation of evaporated aluminium (2010)

First Author: Taking S

Attributed to: III-V MOSFETs for Ultimate CMOS funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1049/el.2010.2781

Publication URI: http://dx.doi.org/10.1049/el.2010.2781

Type: Journal Article/Review

Parent Publication: Electronics Letters

Issue: 4