ZnO-based thin film transistors employing aluminum titanate gate dielectrics deposited by spray pyrolysis at ambient air. (2015)
Attributed to:
Materials World Network-- Ultrafast Switching of Phase Change Materials: Combined Nanosecond and Nanometer Exploration
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1021/acsami.5b00561
PubMed Identifier: 25774574
Publication URI: http://europepmc.org/abstract/MED/25774574
Type: Journal Article/Review
Volume: 7
Parent Publication: ACS applied materials & interfaces
Issue: 13
ISSN: 1944-8244