Effect of metal intermixing on the Schottky barriers of Mo(100)/GaAs(100) interfaces (2014)
Attributed to:
Multiscale Modelling of Metal-Semiconductor Contacts for the Next Generation of Nanoscale Transistors
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.4902009
Publication URI: http://dx.doi.org/10.1063/1.4902009
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 19