High contrast 3D proximity correction for electron-beam lithography: An enabling technique for the fabrication of suspended masks for complete device fabrication within an UHV environment (2015)

First Author: Rosamond M
Attributed to:  High-resolution Electron Beam Lithography Critical Mass Grant funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.mee.2015.01.020

Publication URI: http://dx.doi.org/10.1016/j.mee.2015.01.020

Type: Journal Article/Review

Parent Publication: Microelectronic Engineering