Physical simulation of Si-based resistive random-access memory devices (2015)
Attributed to:
Resistive switches (RRAM) and memristive behaviour in silicon-rich silicon oxides
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/sispad.2015.7292340
Publication URI: http://dx.doi.org/10.1109/sispad.2015.7292340
Type: Conference/Paper/Proceeding/Abstract
ISBN: 978-1-4673-7858-1