Total Ionizing Dose Response of Hafnium-Oxide Based MOS Devices to Low-Dose-Rate Gamma Ray Radiation Observed by Pulse CV and On-Site Measurements (2017)
Attributed to:
High permittivity dielectrics on Ge for end of Roadmap application
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/tns.2016.2633549
Publication URI: http://dx.doi.org/10.1109/tns.2016.2633549
Type: Journal Article/Review
Parent Publication: IEEE Transactions on Nuclear Science
Issue: 1