Recombination defects at the 4H-SiC/SiO2 interface investigated with electrically detected magnetic resonance and ab initio calculations (2018)

First Author: Cottom J
Attributed to:  MATERIALS CHEMISTRY HIGH END COMPUTING CONSORTIUM funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.5024608

Publication URI: http://dx.doi.org/10.1063/1.5024608

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 4