Significant Carrier Extraction Enhancement at the Interface of an InN/p-GaN Heterojunction under Reverse Bias Voltage. (2018)
Attributed to:
Plasma-based synthesis of low-cost and environmentally friendly quantum dots with tailored energy band structure
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.3390/nano8121039
PubMed Identifier: 30545138
Publication URI: http://europepmc.org/abstract/MED/30545138
Type: Journal Article/Review
Volume: 8
Parent Publication: Nanomaterials (Basel, Switzerland)
Issue: 12
ISSN: 2079-4991