Top-down fabrication of GaN nano-laser arrays by displacement Talbot lithography and selective area sublimation (2019)
Attributed to:
Manufacturing of nano-engineered III-nitride semiconductors
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.7567/1882-0786/ab0d32
Publication URI: http://dx.doi.org/10.7567/1882-0786/ab0d32
Type: Journal Article/Review
Parent Publication: Applied Physics Express
Issue: 4