Annealing effect of surface-activated bonded diamond/Si interface (2019)
Attributed to:
Integrated GaN-Diamond Microwave Electronics: From Materials, Transistors to MMICs
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.diamond.2019.02.015
Publication URI: http://dx.doi.org/10.1016/j.diamond.2019.02.015
Type: Journal Article/Review
Parent Publication: Diamond and Related Materials