Optical properties of metamorphic type-I InAs 1-x Sb x /Al y In 1-y As quantum wells grown on GaAs for the mid-infrared spectral range (2019)
Attributed to:
Novel InSb quantum dots monolithically grown on silicon for low cost mid-infrared light emitting diodes
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/1361-6463/ab37cf
Publication URI: http://dx.doi.org/10.1088/1361-6463/ab37cf
Type: Journal Article/Review
Parent Publication: Journal of Physics D: Applied Physics
Issue: 46