Crystalline Interlayers for Reducing the Effective Thermal Boundary Resistance in GaN-on-Diamond. (2020)
Attributed to:
Integrated GaN-Diamond Microwave Electronics: From Materials, Transistors to MMICs
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1021/acsami.0c10129
PubMed Identifier: 33196180
Publication URI: http://europepmc.org/abstract/MED/33196180
Type: Journal Article/Review
Volume: 12
Parent Publication: ACS applied materials & interfaces
Issue: 48
ISSN: 1944-8244