Effect of Si-doped InGaN underlayers on photoluminescence efficiency and recombination dynamics in InGaN/GaN quantum wells (2021)
Attributed to:
Lighting the Future
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/1361-6463/ac22d3
Publication URI: http://dx.doi.org/10.1088/1361-6463/ac22d3
Type: Journal Article/Review
Parent Publication: Journal of Physics D: Applied Physics
Issue: 47