Non-Intrusive Methodologies for Characterization of Bias Temperature Instability in SiC Power MOSFETs (2020)
Attributed to:
Vehicle Electrical Systems Integration (VESI)
funded by
UKRI
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/irps45951.2020.9129637
Publication URI: http://dx.doi.org/10.1109/irps45951.2020.9129637
Type: Conference/Paper/Proceeding/Abstract