The optimisation of a 15 kV 4H-silicon carbide integrated gate commutated thyristor (2022)

First Author: Cao Q

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/wipdaeurope55971.2022.9936508

Publication URI: https://api.elsevier.com/content/abstract/scopus_id/85142514256

Type: Conference/Paper/Proceeding/Abstract