Electroluminescence characterization of mid-infrared InAsSb/AlInAs multi-quantum well light emitting diodes heteroepitaxially integrated on GaAs and silicon wafers (2022)
Attributed to:
Novel InSb quantum dots monolithically grown on silicon for low cost mid-infrared light emitting diodes
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2022.126627
Publication URI: https://api.elsevier.com/content/abstract/scopus_id/85126615344
Type: Journal Article/Review
Parent Publication: Journal of Crystal Growth