Enhancement of InGaN Quantum Well Photoluminescence in a Tamm Metal/Porous-DBR Micro-Cavity (2023)
Attributed to:
Manufacturing of nano-engineered III-nitride semiconductors
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/jphot.2023.3306344
Publication URI: http://dx.doi.org/10.1109/jphot.2023.3306344
Type: Journal Article/Review
Parent Publication: IEEE Photonics Journal
Issue: 5