Enhancement of InGaN Quantum Well Photoluminescence in a Tamm Metal/Porous-DBR Micro-Cavity (2023)

First Author: Sarua A
Attributed to:  Manufacturing of nano-engineered III-nitride semiconductors funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/jphot.2023.3306344

Publication URI: http://dx.doi.org/10.1109/jphot.2023.3306344

Type: Journal Article/Review

Parent Publication: IEEE Photonics Journal

Issue: 5