Scanning capacitance microscopy of GaN-based high electron mobility transistor structures: A practical guide (2023)
Attributed to:
Sir Henry Royce Institute - Cambridge Equipment
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.ultramic.2023.113833
Publication URI: http://dx.doi.org/10.1016/j.ultramic.2023.113833
Type: Journal Article/Review
Parent Publication: Ultramicroscopy