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Scanning capacitance microscopy of GaN-based high electron mobility transistor structures: A practical guide. (2023)

First Author: Chen C

Attributed to: Sir Henry Royce Institute - Cambridge Equipment funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.ultramic.2023.113833

PubMed Identifier: 37666104

Publication URI: http://europepmc.org/abstract/MED/37666104

Type: Journal Article/Review

Volume: 254

Parent Publication: Ultramicroscopy

ISSN: 0304-3991