Enhancement of InGaN Quantum Well Photoluminescence in a Tamm Metal/Porous-DBR micro-Cavity (2023)

First Author: Cryan M

Attributed to: Manufacturing of nano-engineered III-nitride semiconductors funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.36227/techrxiv.23634951

Publication URI: http://dx.doi.org/10.36227/techrxiv.23634951

Type: Preprint