Influence of a Two-Dimensional Growth Mode on Electrical Properties of the GaN Buffer in an AlGaN/GaN High Electron Mobility Transistor (2022)
Attributed to:
Manufacturing of nano-engineered III-nitride semiconductors
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.3390/ma15176043
Publication URI: http://dx.doi.org/10.3390/ma15176043
Type: Journal Article/Review
Parent Publication: Materials
Issue: 17