Influence of a Two-Dimensional Growth Mode on Electrical Properties of the GaN Buffer in an AlGaN/GaN High Electron Mobility Transistor (2022)

First Author: Esendag V
Attributed to:  Manufacturing of nano-engineered III-nitride semiconductors funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.3390/ma15176043

Publication URI: http://dx.doi.org/10.3390/ma15176043

Type: Journal Article/Review

Parent Publication: Materials

Issue: 17