Electronic transport anisotropy of 2D carriers in biaxial compressive strained germanium (2017)

First Author: Morrison C
Attributed to:  Spintronic device physics in Si/Ge Heterostructures. funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.5010933

Publication URI: http://dx.doi.org/10.1063/1.5010933

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 19

ISSN: 00036951