Effect of annealing temperature on diamond/Si interfacial structure (2019)
Attributed to:
Integrated GaN-Diamond Microwave Electronics: From Materials, Transistors to MMICs
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.23919/ltb-3d.2019.8735382
Publication URI: http://dx.doi.org/10.23919/ltb-3d.2019.8735382
Type: Conference/Paper/Proceeding/Abstract