Determination of the nitrogen vacancy as a shallow compensating center in GaN doped with divalent metals (2014)
Attributed to:
Energy Materials: Computational Solutions
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.48550/arxiv.1412.1694
Publication URI: https://arxiv.org/abs/1412.1694
Type: Other