Towards Substrate Engineering of Graphene-Silicon Schottky Diode Photodetectors (2017)

First Author: Selvi H

Attributed to: Instrument to identify defects and impurities in wide band gap semiconductors via excited states funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.48550/arxiv.1706.09042

Publication URI: https://arxiv.org/abs/1706.09042

Type: Other