Dislocations as channels for the fabrication of sub-surface porous GaN by electrochemical etching (2020)

First Author: Massabuau F

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.17863/cam.50208

Publication URI: https://www.repository.cam.ac.uk/handle/1810/303132

Type: Journal Article/Review