Dislocations as channels for the fabrication of sub-surface porous GaN by electrochemical etching (2020)
Attributed to:
Non-polar nitride quantum dots for application in single photon sources
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.17863/cam.50208
Publication URI: https://www.repository.cam.ac.uk/handle/1810/303132
Type: Journal Article/Review