Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers (2018)

First Author: Choi F
Attributed to:  Sir Henry Royce Institute - Cambridge Equipment funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.17863/cam.30431

Publication URI: https://www.repository.cam.ac.uk/handle/1810/283069

Type: Journal Article/Review