Enhanced piezoelectricity and electromechanical efficiency in semiconducting GaN due to nanoscale porosity (2020)

First Author: Calahorra Y
Attributed to:  Sir Henry Royce Institute - Cambridge Equipment funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.17863/cam.58550

Publication URI: https://www.repository.cam.ac.uk/handle/1810/311457

Type: Journal Article/Review