Enhanced piezoelectricity and electromechanical efficiency in semiconducting GaN due to nanoscale porosity (2020)
Attributed to:
Sir Henry Royce Institute - Cambridge Equipment
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.17863/cam.58550
Publication URI: https://www.repository.cam.ac.uk/handle/1810/311457
Type: Journal Article/Review