Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon. (2021)
Attributed to:
Integrated GaN-Diamond Microwave Electronics: From Materials, Transistors to MMICs
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.17863/cam.63578
Publication URI: https://www.repository.cam.ac.uk/handle/1810/316471
Type: Journal Article/Review