Ti Alloyed a-Ga2O3: Route towards Wide Band Gap Engineering. (2020)

First Author: Barthel A
Attributed to:  Integrated GaN-Diamond Microwave Electronics: From Materials, Transistors to MMICs funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.17863/cam.65575

Publication URI: https://www.repository.cam.ac.uk/handle/1810/318461

Type: Journal Article/Review