Simulation study of the 20nm gate-length Ge implant-free quantum well p-MOSFET (2011)

First Author: Chan K

Attributed to: Renaissance Germanium funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.mee.2010.09.025

Publication URI: http://dx.doi.org/10.1016/j.mee.2010.09.025

Type: Journal Article/Review

Parent Publication: Microelectronic Engineering

Issue: 4