Reverse graded SiGe/Ge/Si buffers for high-composition virtual substrates (2010)
Attributed to:
Ultimate Control of Strain Relaxation Processes in SiGe Layers
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.3311556
Publication URI: http://dx.doi.org/10.1063/1.3311556
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 6