Direct Tunnelling Gate Leakage Variability in Nano-CMOS Transistors (2010)
Attributed to:
Atomic Scale Simulation of Nanoelectronic Devices
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/ted.2010.2075932
Publication URI: http://dx.doi.org/10.1109/ted.2010.2075932
Type: Journal Article/Review
Parent Publication: IEEE Transactions on Electron Devices
Issue: 11