Thermal Stability of Thin Compressively Strained Ge Surface Channels Grown on Relaxed Si 0.2 Ge 0.8 Reverse-Graded Buffers (2012)
Attributed to:
Renaissance Germanium
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1149/2.063205jes
Publication URI: http://dx.doi.org/10.1149/2.063205jes
Type: Journal Article/Review
Parent Publication: Journal of The Electrochemical Society
Issue: 5