Drain bias effects on statistical variability and reliability and related subthreshold variability in 20-nm bulk planar MOSFETs (2014)
Attributed to:
Atomic Scale Simulation of Nanoelectronic Devices
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.sse.2014.04.017
Publication URI: http://dx.doi.org/10.1016/j.sse.2014.04.017
Type: Journal Article/Review
Parent Publication: Solid-State Electronics