This chapter addresses the field of materials development, which has been the subject of a major research drive aimed at finding new ways to enhance the performance of semiconductor technologies. It covers three areas that will each have a dramatic impact on the development of future CMOS devices: global and local strained and alternative materials for high speed channels on bulk substrate and insulator; very low access resistance; and various high dielectric constant gate stacks for power sca
Attributed to:
Renaissance Germanium
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Type: Book Chapter
Book Title: Nanoscale CMOS: Innovative Materials, Modeling and Characterization (2010)
ISBN: 978-1-84821-180-3