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This chapter addresses the field of materials development, which has been the subject of a major research drive aimed at finding new ways to enhance the performance of semiconductor technologies. It covers three areas that will each have a dramatic impact on the development of future CMOS devices: global and local strained and alternative materials for high speed channels on bulk substrate and insulator; very low access resistance; and various high dielectric constant gate stacks for power sca

First Author: Balestra, Francis
Attributed to:  Renaissance Germanium funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Type: Book Chapter

Book Title: Nanoscale CMOS: Innovative Materials, Modeling and Characterization (2010)

ISBN: 978-1-84821-180-3