UP-SiC: Unlocking the potential of Silicon Carbide in Power Electronics
Lead Research Organisation:
University of Cambridge
Abstract
Silicon Carbide is the true “wonder” material for power electronics. Its exceptional field strength (10x that of Silicon) and high thermal conductivity (3x that of Silicon and 3.5x that of Gallium Nitride) make it ideal for high voltage (over 600V) and high power (over 1kW) applications, such as inverters for electric vehicles, wind and photovoltaic converters, and power supplies for AI data centres. Moreover, the CO2 savings enabled by Silicon Carbide are projected to be an order of magnitude higher than those provided by the most advanced Silicon technologies. Furthermore, at 1.2 kV rating and above, Silicon Carbide is superior to other promising wide bandgap materials such as GaN.
However, despite its impressive market traction with an annual growth rate exceeding 30%, one major issue remains unsolved: the very poor carrier mobility (e.g. 20 cm2/Vs) in the modulated channel at the oxide/SiC interface. This value is 50x lower than in an equivalent Silicon device, negating to some extent the advantages of MOS-based Silicon Carbide devices and hampering its outstanding potential in power electronics. It is the aim of this project to study in greater depth this interface using innovative techniques based on electron microscopy, propose novel techniques to enhance the mobility by 5x at the oxide/SiC interface and experimentally demonstrate disruptive device concepts in Silicon Carbide such as high voltage FinFETs which use quantum effects to increase the mobility by a factor of 10x. The proposed Japan-UK consortium is highly complementary and very well equipped to undertake this work.
However, despite its impressive market traction with an annual growth rate exceeding 30%, one major issue remains unsolved: the very poor carrier mobility (e.g. 20 cm2/Vs) in the modulated channel at the oxide/SiC interface. This value is 50x lower than in an equivalent Silicon device, negating to some extent the advantages of MOS-based Silicon Carbide devices and hampering its outstanding potential in power electronics. It is the aim of this project to study in greater depth this interface using innovative techniques based on electron microscopy, propose novel techniques to enhance the mobility by 5x at the oxide/SiC interface and experimentally demonstrate disruptive device concepts in Silicon Carbide such as high voltage FinFETs which use quantum effects to increase the mobility by a factor of 10x. The proposed Japan-UK consortium is highly complementary and very well equipped to undertake this work.