Novel Time-Resolved Thermal Imaging: AlGaN/GaN Heterostructure Field Effect Transistors
Lead Research Organisation:
University of Bristol
Department Name: Physics
Abstract
The increasing complexity of tasks required by communication, radar, aircraft, automotive systems benefits from the use of novel materials in high speed devices. Such devices, for example, radio-frequency (RF) transistors used in mobile communication base stations or phased array radars, have to meet certain performance standards. Electrical characterization is mostly used today to tackle challenges in the device development process to meet these standards. Electrical measurements, however, determine average device properties rather than specific information on spatial characteristics such as temperature and electric field inhomogeneities. If direct imaging of temperature and electric field distribution over a device area was possible with high time resolution this would open a new dimension for the investigation of semiconductor devices. This would be of great benefit to device researchers and developers to study and tackle time-dependent phenomena limiting device performance. Adequate techniques, however, are not existent at present. In the proposed work we will develop the first high-spatial resolution time-resolved thermal prober for semiconductor device imaging ever built to our knowledge. Electric field distribution will be extracted from the temperature information. The technique will be illustrated on the example of the topical AlGaN/GaN HFETs to learn more about how these devices operate in detail and what limiting factors for current devices are. For example, we will obtain information about carrier trapping related to AlGaN/GaN HFET current collapse, but experience shows that other interesting and potentially important discoveries are likely to result as well.
People |
ORCID iD |
Martin Kuball (Principal Investigator) |
Publications

Kuball M
(2007)
Time-Resolved Temperature Measurement of AlGaN/GaN Electronic Devices Using Micro-Raman Spectroscopy
in IEEE Electron Device Letters


Martin Kuball (Author)
(2008)
Nanosecond time-resolved Raman thermography: Probing device and channel temperature in pulsed GaN and GaAs HEMTs

Riedel G
(2009)
Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers
in IEEE Electron Device Letters

Riedel G
(2008)
Nanosecond Timescale Thermal Dynamics of AlGaN/GaN Electronic Devices
in IEEE Electron Device Letters

Simms R
(2008)
Current collapse in AlGaN/GaN transistors studied using time-resolved Raman thermography
in Applied Physics Letters

Simms R
(2008)
Channel Temperature Determination in High-Power AlGaN/GaN HFETs Using Electrical Methods and Raman Spectroscopy
in IEEE Transactions on Electron Devices
Description | A new technique was developed to probe temperature in semiconductor electronic devices with nanosecond time resolution, and submicron spatial resolution. |
Exploitation Route | Applicable for reliability testing of electronics in industry. Based on this project Bristol became partner in different programmes, such as NJTT led by TriQuint Semiconductors funded by DARPA. The technique is presently used in commercial setting to support industry. Based on the results software was developed that could be sold to interested customers in the future. |
Sectors | Electronics |
Description | The technique developed is presently used by us and new groups which subsequently implemented our developments to support defense and space industry product development, as well as on government funded (UK, EC, US) research programs. |
First Year Of Impact | 2010 |
Sector | Aerospace, Defence and Marine,Electronics,Transport |
Impact Types | Economic |
Description | QinetiQ (Malvern) |
Organisation | Qinetiq |
Department | QinetiQ (Malvern) |
Country | United Kingdom |
Sector | Private |
Start Year | 2006 |
Description | Renishaw Plc |
Organisation | Renishaw PLC |
Country | United Kingdom |
Sector | Private |
Start Year | 2006 |
Description | SELEX Sensors and Airborne Systems Ltd |
Organisation | Selex ES |
Department | SELEX Sensors and Airborne Systems |
Country | United Kingdom |
Sector | Private |
Start Year | 2006 |