Location sensitive photodetectors based on strained 2D materials

Strained semiconductors are often regarded as means to improving the electronic properties of future devices. For example, strained silicon can exhibit increased mobility and has been highlighted as a key feature in continued miniaturisation of CMOS. In contrast to bulk materials, where strain is produced by lattice-mismatched growth that is predetermined and limited to low strains, atomically-thin materials can sustain significantly higher strain levels, due to their large area-to-thickness aspect ratio, making the changes to their electronic properties more pronounced.
The aim of this project is twofold. First, it seeks to generate an understanding of charge carrier dynamics within strained TMDCs. In particular, the capture and emission properties of charges within TMDC flakes and in the vicinity of edges and interfaces. The second aim is to develop a sensing platform that is based on the modified electrical impedance of strained, large area TMDC films. The project will use a combination of scanning probe measurements to quantify the carrier concentration, the concentration of trap states and their energy distribution. It is envisaged that a full electrostatic map of the materials will emerge which will be utilised to prototype a location sensitive photodetector based on the knowledge gathered in these experiments.