Silicon based QD light sources and lasers
Lead Research Organisation:
University of Sheffield
Department Name: Physics and Astronomy
Abstract
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Organisations
Publications
Orchard J
(2017)
Silicon-Based Single Quantum Dot Emission in the Telecoms C-Band
in ACS Photonics
Orchard JR
(2016)
In situ annealing enhancement of the optical properties and laser device performance of InAs quantum dots grown on Si substrates.
in Optics express
| Description | Observation of emission from single quantum dots at 1.5um from a structure grown on Si. |
| Exploitation Route | Potential to be used to produce single photon sources operating at telecommunications wavelengths and directly compatible with CMOS electronics |
| Sectors | Aerospace Defence and Marine Electronics Financial Services and Management Consultancy Security and Diplomacy |
| Title | Enhanced defect filter layers by in-situ annealing |
| Description | The growth of III-V semiconductors on Si requires carefully optimised defect filter layers to reduce the density of dislocations which are able to propagate from the Si_III-V interface to the III-V active region. Defect filter layers use strained InGaAs-GaAs superlattices. We have shown that by adding insitu-annealing the efficiency of these DFLs is increased with lower numbers of dislocations reaching the III-V active region. |
| Type Of Material | Improvements to research infrastructure |
| Year Produced | 2016 |
| Provided To Others? | Yes |
| Impact | We have been able to fabricate lasers on Si substrates with improved performance. |