Two-Dimensional Heterostructure Based Electronic and Optoeletronic Devices

This project will involve the development of the process for in-situ fabrication of large area 2D material
heterostructures to realise optical and electronic devices. The choice of 2D material system can be either hBN/WSe2/
hBN or 2D MoS2/WSe2 pn junctions (or similar functional combinations including graphene and conventional 3D
dielectric layers). The aims of this project would be to characterize the optical and electronic properties of such
stacks and investigate the interfaces between these layers.
Specific objectives include: 1) Development of a CVD/ALD process for the chosen 2D heterostructure systems. 2)
Characterization of device mobility including PL efficiency, Raman (and other) spectroscopy of strain and interlayer
modes, microscopy of domain sizes etc. of individual semiconducting materials and the effects on mobility due to the
formation of heterostructures. These data will be used as feedback to improve deposition processes. 3) Nano-
ARPES of the electronic structure of heterostructures. 4) Fabrication of pn-junction-based photodetectors and
tunnelling diode/transistor devices. 5) Comprehensive device characterization data for the chosen systems and
devices, including scanning photocurrent microscopy and I-V curves. 6) Exploration of novel heterostructure-based
valleytronic device concepts.