Embedded Packaging of GaN Devices

The aim of this project is to develop ultra-low inductance three-dimensional integrated packages for WBG devices particularly GaN devices to enable full exploitation of GaN devices' superior characteristics. Main objectives of this project are: (1) Create GaN HEMT based integrated switching phase-leg capable of operating at 400V and 150A; (2) Novel 3D integration of GaN HEMT and passive components to reduce parasitic inductances by at least 50% and mitigate false turn-on; (3) Design a thermal management system which will enable the module's application in a 200 kHz motor drive; (4) Verify wether the designed integrated module could meet the specified electrical and thermal performances by simulations and experiments, (5) Propose an optimized process flow for manufacturing the module; and (6) Investigate the temperature/stress profile of the integrated module under a typical mission profile such as EV urban driving cycle.