Gallium Oxide Power Semiconductor Devices

Aims and Objectives
- Deliver a disruptive technology for high voltage (>10kV) gallium oxide power electronics application. These devices are ubiquitous in grid-level power systems.
- Main aim is to fabricate a normally-off gallium oxide transistor.
- Explore novel processing techniques including ion implantation, oxide deposition, metallisation and corresponding annealing in order to establish a device technology in B-gallium oxide.
- Design the final power semiconductor device through utilising finite element software that covers 2-D, 3-D field effect transistor structures and process flow.

Methodology
The work will be undertaken in the Centre for Nano-health cleanroom micro- and nano-fabrication suite. Through a series of novel photolithography, oxide / metal deposition and annealing steps, devices based on B -gallium oxide will be fabricated. The devices fabricated will be based on structures that have previously been designed / modelled using finite element software, a classic drift-diffusion tool that emulates current flow, electric field distribution and process flows of semiconductor device technology. Finally, the device structures will be characterised electrically and physically on probe stations, semiconductor analysers and the microscopy suite available through the Materials Academy. Much of this work will be carried out in the Wolfson Research Laboratory.