Ferroelectrics for Nanoelectronics (FERN)
Lead Research Organisation:
Imperial College London
Department Name: Materials
Abstract
Abstracts are not currently available in GtR for all funded research. This is normally because the abstract was not required at the time of proposal submission, but may be because it included sensitive information such as personal details.
People |
ORCID iD |
| Neil Alford (Principal Investigator) |
Publications
Mojarad S
(2012)
Anomalous resistive switching phenomenon
in Journal of Applied Physics
Gammon P
(2012)
A study of temperature-related non-linearity at the metal-silicon interface
in Journal of Applied Physics
Zou B
(2013)
SrRuO 3 thin films grown on MgO substrates at different oxygen partial pressures
in Journal of Materials Research
Altynnikov A
(2014)
Suppression of slow capacitance relaxation phenomenon in Pt/Ba0.3Sr0.7TiO3/Pt thin film ferroelectric structures by annealing in oxygen atmosphere
in Applied Physics Letters
| Description | I. A method was developed for reproducible fabrication of epitaxial ultra-thin (up to 10nm) SrTiO3 and BaTiO3 films on various substrates. The deposited films exhibited electrical properties similar to the ones of the bulk materials. II. A method was developed for low-temperature deposition of ferroelectric (SrTiO3 and BaTiO3) films on silicon substrates. III. Resistive switching was observed in Pt/SrTiO3/Pt capacitor devices. The switching depends on both the amplitude and polarity of the applied voltage and cannot be described as either bipolar or unipolar resistive switching. |
| Sectors | Electronics |