Next Generation Quantum Detector Utilising Engineered Materials for Short-wave Infrared Applications

We have seen rapid development and growing interest in quantum technologies-based applications in the past decade and the overall global quantum technology market is expected to reach $31.57B by 2026. Most of these emerging quantum applications require single-photon avalanche diode (SPAD) detectors operating beyond the spectral range of silicon but with "silicon-like" performance. The use of "silicon-like" short-wave infrared (SWIR) SPAD detectors in the existing systems will immediately improve resolution and acquisition time for the existing imaging system and enhance the range and improve data rate for Quantum Key Distribution (QKD). However, the present commercially available InGaAs/InP based SPADs based on designs from more than two decades ago are unlikely to have a step change in their performance.

Over the last five years, the advent of several innovations by way of novel III-V materials and semiconductor band structure engineering offers us the possibility of a paradigm shift in the performance of long wavelength detectors. The next revolution in the development of SPADs in the SWIR region will almost certainly be using novel materials and band structure engineered structures. Such a revolution will significantly enhance detection efficiency and fast timing. This new class of detectors will be evaluated on existing state-of-the-art testbeds for time-of-flight ranging/depth imaging and QKD. This Fellowship proposal has the ambition to sweep away the obstacles of material and processing problems that are hindering the development of affordable and easy operation SPADs, and to bridge gaps between material sciences, semiconductor physics, manufacturability and quantum technology applications in order to improve the scope and overall performance of next generation quantum technology-based applications.